IPS80R1K2P7AKMA1
MOSFET N-CH 800V 4.5A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series N-Channel Power MOSFET, part number IPS80R1K2P7AKMA1, features an 800V drain-source breakdown voltage and a continuous drain current of 4.5A at 25°C (Tc). This device offers a maximum on-resistance of 1.2 Ohm at 1.7A and 10V Vgs. The device is characterized by a gate charge of 11 nC typical at 10V and an input capacitance of 300 pF maximum at 500V. With a power dissipation of 37W maximum (Tc) and a maximum operating junction temperature of 150°C, the IPS80R1K2P7AKMA1 is suitable for through-hole mounting in the PG-TO251-3-342 package. This component finds application in power factor correction, switch-mode power supplies, and general-purpose power applications.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 1.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 80µA |
| Supplier Device Package | PG-TO251-3-342 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 500 V |
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