IPS70R950CEAKMA1
MOSFET N-CH 700V 7.4A TO251Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IPS70R950CEAKMA1, a CoolMOS™ N-Channel Power MOSFET designed for high-voltage applications. This component features a 700V drain-source breakdown voltage and a continuous drain current capability of 7.4A at 25°C (Tc). With a maximum power dissipation of 68W (Tc), it is suitable for demanding power conversion tasks. The device exhibits a typical Rds On of 950mOhm at 1.5A and 10V gate drive. Key parameters include a gate charge of 15.3 nC at 10V and an input capacitance of 328 pF at 100V. The IPS70R950CEAKMA1 is housed in a PG-TO251-3-11 package, facilitating through-hole mounting. This MOSFET is commonly utilized in power supply units, industrial automation, and renewable energy systems. Its operating temperature range is from -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 328 pF @ 100 V |
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