IPS70R900P7SAKMA1
MOSFET N-CH 700V 6A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' CoolMOS™ P7 series IPS70R900P7SAKMA1 is a 700 V N-Channel Power MOSFET. This device offers a continuous drain current of 6 A at 25°C and a maximum power dissipation of 30.5 W at 25°C. Key electrical characteristics include a maximum Rds(on) of 900 mOhm at 1.1 A and 10 V, and a gate charge (Qg) of 6.8 nC at 10 V. Input capacitance (Ciss) is specified at a maximum of 211 pF at 400 V. The MOSFET is housed in a PG-TO251-3 package with through-hole mounting. This component is suitable for applications in power factor correction, switch-mode power supplies, and general purpose power conversion. It operates within an ambient temperature range of -40°C to 150°C.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 1.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 30.5W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 60µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 211 pF @ 400 V |
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