IPS70R600CEAKMA1
MOSFET N-CH 700V 10.5A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPS70R600CEAKMA1 is an N-channel power MOSFET designed for high-voltage applications. This device features a 700V drain-source voltage (Vdss) and a continuous drain current (Id) of 10.5A at 25°C (Tc). The IPS70R600CEAKMA1 offers a maximum power dissipation of 86W (Tc) and a low on-resistance (Rds On) of 600mOhm at 1A and 10V Vgs. Key parameters include a gate charge (Qg) of 22 nC at 10V and an input capacitance (Ciss) of 474 pF at 100V. The device operates within a temperature range of -40°C to 150°C (TJ) and is housed in a PG-TO251-3-11 package, utilizing through-hole mounting. This component is suitable for use in power supplies, lighting, and industrial motor drive applications.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 86W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 210µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 474 pF @ 100 V |
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