IPS70R360P7SAKMA1
MOSFET N-CH 700V 12.5A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series N-channel power MOSFET, part number IPS70R360P7SAKMA1. This device features a 700 V drain-source voltage (Vdss) and a continuous drain current (Id) of 12.5 A at 25°C. With a maximum Rds(on) of 360 mOhm at 3 A and 10 V, it offers efficient switching performance. The MOSFET is packaged in a TO-251-3 (IPAK) through-hole configuration, designed for thermal dissipation up to 59.5 W. Key parameters include a gate charge (Qg) of 16.4 nC at 10 V and input capacitance (Ciss) of 517 pF at 400 V. This component is suitable for applications in power supplies and industrial automation. Operating temperature range is -40°C to 150°C.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 59.5W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 150µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 16.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 517 pF @ 400 V |
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