IPS70R1K4CEAKMA1
MOSFET N-CH 700V 5.4A TO251Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ IPS70R1K4CEAKMA1 is a 700V N-Channel Power MOSFET. This component features a maximum continuous drain current of 5.4A at 25°C (Tc) and a maximum on-resistance of 1.4 Ohm at 1A, 10V. The device offers a low gate charge of 10.5 nC at 10V and an input capacitance of 225 pF at 100V. Designed for through-hole mounting in a TO-251-3 Stub Leads, IPAK package (PG-TO251-3-11), it dissipates up to 53W (Tc) and operates across a temperature range of -40°C to 150°C (TJ). This MOSFET is suitable for applications in power supply units, industrial power systems, and automotive electronics.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 53W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 100 V |
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