IPS65R950C6AKMA1
MOSFET N-CH 650V 4.5A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPS65R950C6AKMA1. This device features a 650V drain-source breakdown voltage and a continuous drain current capability of 4.5A at 25°C (Tc). The low on-resistance is specified as 950mOhm maximum at 1.5A and 10V Vgs. With a maximum power dissipation of 37W (Tc), the IPS65R950C6AKMA1 is housed in a PG-TO251-3-11 package, also known as TO-251-3 IPAK, for through-hole mounting. Key parameters include input capacitance (Ciss) of 328pF maximum at 100V Vds and gate charge (Qg) of 15.3nC maximum at 10V Vgs. This component is suitable for applications in server power supplies, industrial power supplies, and lighting. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 328 pF @ 100 V |
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