IPS65R650CEAKMA1
MOSFET N-CH 700V 10.1A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' IPS65R650CEAKMA1 is a 700 V N-Channel MOSFET designed for high-efficiency power conversion applications. This component features a low on-resistance of 650mOhm at 2.1A and 10V gate drive, with a continuous drain current rating of 10.1A (Tc). The device offers a maximum power dissipation of 86W (Tc) and a threshold voltage of 3.5V at 210µA. It is housed in a TO-251-3 (IPAK) package, suitable for through-hole mounting. Key parameters include a gate charge of 23 nC @ 10 V and input capacitance of 440 pF @ 100 V. The operating temperature range is -40°C to 150°C. This MOSFET is commonly utilized in industrial power supplies, lighting, and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 2.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 86W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 210µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 700 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
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