IPS65R400CEAKMA1
CONSUMERManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies N-Channel Power MOSFET, part number IPS65R400CEAKMA1, is a 650 V device from the CoolMOS™ CE series. This high-voltage MOSFET features a continuous drain current of 15.1A (Tc) and a maximum power dissipation of 118W (Tc). It offers a low on-resistance (Rds On) of 400mOhm at 3.2435A and 10V, with a gate charge (Qg) of 39 nC at 10V. The input capacitance (Ciss) is a maximum of 710 pF at 100V. Designed for through-hole mounting in a TO-251-3 (IPAK) package, it operates across a temperature range of -55°C to 150°C. This component is suitable for consumer applications, leveraging Infineon's advanced MOSFET technology.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 3.2435A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 118W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 320µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V |
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