IPS65R1K5CEAKMA1
MOSFET N-CH 650V 3.1A TO251Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' CoolMOS™ CE series N-Channel Power MOSFET, part number IPS65R1K5CEAKMA1, offers a 650V drain-source breakdown voltage and a continuous drain current of 3.1A at 25°C (Tc). This through-hole component, housed in a TO-251-3 Stub Leads, IPAK package, features a maximum on-resistance of 1.5 Ohm at 1A and 10V Vgs. With a maximum power dissipation of 28W (Tc) and a gate charge of 10.5 nC at 10V, it is suitable for applications requiring high voltage and efficient switching. The MOSFET utilizes Metal Oxide technology and operates within a temperature range of -40°C to 150°C (TJ). Typical applications include power supplies and lighting systems.
Additional Information
Series: CoolMOS™ CERoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 100µA |
| Supplier Device Package | TO-251 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 100 V |
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