IPS65R1K0CEAKMA1
MOSFET N-CH 650V 4.3A TO251Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ CE series N-Channel power MOSFET, part number IPS65R1K0CEAKMA1, offers a 650V drain-source breakdown voltage and 4.3A continuous drain current at 25°C (Tc). This device features a maximum on-resistance of 1 Ohm at 1.5A, 10V. With a gate charge of 15.3 nC and input capacitance of 328 pF, it is suitable for demanding applications. The IPS65R1K0CEAKMA1 is packaged in a TO-251-3 Stub Leads, IPAK through-hole package, rated for 37W power dissipation (Tc) and an operating temperature range of -40°C to 150°C. This component finds application in power supply units, consumer electronics, and industrial power conversion.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Supplier Device Package | TO-251 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 328 pF @ 100 V |
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