IPS60R800CEAKMA1
CONSUMERManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies N-Channel MOSFET, part number IPS60R800CEAKMA1, from the CoolMOS™ series. This device features a 600 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 8.4 A at 25°C. The maximum power dissipation is 74 W (Tc). With a specified Rds On of 800 mOhm at 2 A and 10 V, and a gate charge (Qg) of 17.2 nC at 10 V, this component is suitable for various power conversion applications. The input capacitance (Ciss) is a maximum of 373 pF at 100 V. The device is housed in a PG-TO251-3 package with through-hole mounting and operates within a temperature range of -40°C to 150°C (TJ). This component finds application in consumer electronics and power supply designs.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.4A (Tj) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 74W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 170µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 373 pF @ 100 V |
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