IPS60R650CEAKMA1
CONSUMERManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPS60R650CEAKMA1, offers a 600 V breakdown voltage and a continuous drain current of 9.9 A at 25°C. This device features a low on-resistance of 650 mOhm at 2.4 A and 10 V, with a gate charge of 20.5 nC at 10 V. The input capacitance (Ciss) is a maximum of 440 pF at 100 V. Designed for through-hole mounting, it utilizes the PG-TO251-3 package. With a maximum power dissipation of 82 W at 25°C, this MOSFET operates within a temperature range of -40°C to 150°C (TJ). Applications include consumer electronics and power supplies where high voltage and efficient switching are critical.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Tj) |
| Rds On (Max) @ Id, Vgs | 650mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 82W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 440 pF @ 100 V |
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