IPS60R400CEAKMA1
CONSUMERManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the IPS60R400CEAKMA1, an N-Channel CoolMOS™ CE series power MOSFET. This device features a drain-source voltage (Vdss) of 600 V and a continuous drain current (Id) of 14.7 A at 25°C (Tj). With a maximum power dissipation of 112 W (Tc), it is suitable for applications requiring efficient power handling. The Rds On is specified at 400 mOhm maximum at 3.8 A and 10 V Vgs. Key parameters include a typical gate charge (Qg) of 32 nC at 10 V and input capacitance (Ciss) of 700 pF at 100 V. The component is housed in a PG-TO251-3 package with through-hole mounting. This MOSFET technology is utilized in consumer electronics and power supply applications. It operates within a temperature range of -40°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.7A (Tj) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 3.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 112W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 300µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 100 V |
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