IPS60R3K4CEAKMA1
CONSUMERManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ CE series N-channel power MOSFET, part number IPS60R3K4CEAKMA1. This 600V device features a low on-resistance of 3.4 Ohms maximum at 500mA, 10V, and a continuous drain current capability of 2.6A (Tj). With a gate charge of 4.6 nC at 10V and input capacitance of 93 pF at 100V, it is designed for efficient switching. The TO-251-3 short leads (IPAK) package is suitable for through-hole mounting. Operating temperature range is -40°C to 150°C (TJ). This MOSFET is utilized in consumer electronics applications.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tj) |
| Rds On (Max) @ Id, Vgs | 3.4Ohm @ 500mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 3.5V @ 40µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 93 pF @ 100 V |
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