IPS60R360PFD7SAKMA1
MOSFET N-CH 650V 10A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the IPS60R360PFD7SAKMA1, an N-channel CoolMOS™ PFD7 series power MOSFET. This component offers a 650V drain-source voltage and a continuous drain current of 10A at 25°C. With a typical Rds(on) of 360mOhm at 2.9A and 10V gate-source voltage, it features a gate charge of 12.7nC and an input capacitance of 534pF at 400V. The device is rated for 43W maximum power dissipation and operates within a temperature range of -40°C to 150°C. Packaged in a PG-TO251-3 (IPAK) through-hole configuration, this MOSFET is suitable for applications in power supply, industrial, and automotive sectors.
Additional Information
Series: CoolMOS™PFD7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 43W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 140µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 534 pF @ 400 V |
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