IPS60R280PFD7SAKMA1
CONSUMER PG-TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPS60R280PFD7SAKMA1, offers 600 V drain-source voltage and 12 A continuous drain current at 25°C. This device features a low on-resistance of 280 mOhm at 3.6 A and 10 V gate-source voltage. With a maximum power dissipation of 51 W (Tc), it is suitable for high-efficiency applications. The device is housed in a PG-TO251-3 package with through-hole mounting. Key parameters include a gate charge of 15.3 nC at 10 V and input capacitance of 656 pF at 400 V. Operating temperature ranges from -40°C to 150°C (TJ). This component is utilized in various industrial applications including power supplies and motor control.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 3.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 51W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 180µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 656 pF @ 400 V |
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