IPS60R210PFD7SAKMA1
MOSFET N-CH 650V 16A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ PFD7 series N-channel power MOSFET, part number IPS60R210PFD7SAKMA1. This device offers a 650V drain-source breakdown voltage and a continuous drain current of 16A at 25°C (Tc). The IPS60R210PFD7SAKMA1 features a low on-resistance of 210mOhm maximum at 4.9A and 10V Vgs. Key parameters include a gate charge (Qg) of 23 nC maximum at 10V and input capacitance (Ciss) of 1015 pF maximum at 400V. The device is housed in a PG-TO251-3 (IPAK) package with through-hole mounting. Its maximum power dissipation is 64W (Tc) and it operates across an industrial temperature range of -40°C to 150°C (TJ). The IPS60R210PFD7SAKMA1 is suitable for applications in power supplies and industrial motor drives.
Additional Information
Series: CoolMOS™PFD7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 4.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 64W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 240µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1015 pF @ 400 V |
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