IPS60R1K0PFD7SAKMA1
MOSFET N-CH 650V 4.7A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies IPS60R1K0PFD7SAKMA1 is a CoolMOS™ PFD7 series N-channel MOSFET designed for high efficiency and performance. This component features a drain-source voltage of 650 V and a continuous drain current of 4.7 A at 25°C (Tc). With a maximum power dissipation of 26 W (Tc) and a low Rds On of 1 Ohm maximum at 1 A and 10 V, it optimizes energy conversion. The device offers a gate charge of 6 nC at 10 V and an input capacitance of 230 pF at 400 V. Packaged in a TO-251-3 (IPAK) through-hole configuration, it operates across a junction temperature range of -40°C to 150°C. This MOSFET is suitable for applications in power factor correction, switch-mode power supplies, and general purpose power switching.
Additional Information
Series: CoolMOS™PFD7RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 26W (Tc) |
| Vgs(th) (Max) @ Id | 4.5V @ 50µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 400 V |
Request a Quote
Clients Also Buy
IPN60R360PFD7SATMA1
MOSFET N-CH 600V 10A SOT223
IPAN60R125PFD7SXKSA1
MOSFET N-CH 650V 25A TO220
IPN60R1K5PFD7SATMA1
MOSFET N-CH 600V 3.6A SOT223
