IPS60R1K0CEAKMA1
CONSUMERManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ CE series N-Channel power MOSFET, part number IPS60R1K0CEAKMA1. This through-hole device features a 600 V drain-source voltage and a continuous drain current of 6.8 A at 25°C (TJ). The maximum power dissipation is 61 W at the case temperature. The Rds(On) is specified at 1 Ohm maximum for a drain current of 1.5 A and a gate-source voltage of 10 V. Key parameters include a gate charge of 13 nC at 10 V and an input capacitance of 280 pF at 100 V. The device operates across a temperature range of -40°C to 150°C (TJ). The package is PG-TO251-3. This component is commonly utilized in power supply applications for consumer electronics and lighting.
Additional Information
Series: CoolMOS™ CERoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tj) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 61W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Supplier Device Package | PG-TO251-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V |
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