IPS13N03LA G
MOSFET N-CH 25V 30A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPS13N03LA-G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 25V and a continuous Drain Current (Id) of 30A at 25°C (Tc), with a maximum power dissipation of 46W (Tc). The Rds On is specified at a low 12.8mOhm maximum at 30A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 8.3 nC maximum at 5V Vgs and an input capacitance (Ciss) of 1043 pF maximum at 15V Vds. It supports a wide drive voltage range from 4.5V to 10V, with a maximum Vgs of ±20V and a threshold voltage (Vgs(th)) of 2V at 20µA. The device is housed in a TO-251-3, IPAK package with stub leads, suitable for through-hole mounting. Operating temperature range is from -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 46W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1043 pF @ 15 V |
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