IPS135N03LGAKMA1
MOSFET N-CH 30V 30A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPS135N03LGAKMA1 is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a 30V drain-source voltage rating and a continuous drain current capability of 30A at 25°C (Tc). The low on-resistance, specified as a maximum of 13.5mOhm at 30A and 10V Vgs, minimizes conduction losses. With a gate charge (Qg) of 10 nC (max) at 10V Vgs and input capacitance (Ciss) of 1000 pF (max) at 15V Vds, it offers optimized switching performance. The MOSFET is housed in a PG-TO251-3-11 package, commonly known as IPAK, suitable for through-hole mounting. It can dissipate up to 31W (Tc) and operates across a wide temperature range of -55°C to 175°C (TJ). This component is utilized in automotive and industrial power management systems requiring robust and reliable switching.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 15 V |
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