IPS12CN10LGBKMA1
MOSFET N-CH 100V 69A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies' OptiMOS™ series N-Channel Power MOSFET, part number IPS12CN10LGBKMA1, offers robust performance with a 100V drain-source voltage. This device features a continuous drain current capability of 69A at 25°C (Tc) and a maximum power dissipation of 125W (Tc). The low on-resistance of 11.8mOhm at 69A and 10V Vgs, coupled with a gate charge of 58 nC at 10V, ensures efficient switching. Input capacitance (Ciss) is specified at a maximum of 5600 pF at 50V. Designed for through-hole mounting, it utilizes the PG-TO251-3-11 package. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 69A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.8mOhm @ 69A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.4V @ 83µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 50 V |
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