IPS110N12N3GBKMA1
MOSFET N-CH 120V 75A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPS110N12N3GBKMA1 is an N-Channel Power MOSFET designed for high-performance applications. This component features a 120V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 75A at 25°C (Tc), with a maximum power dissipation of 136W (Tc). The Rds On is specified at a maximum of 11mOhm at 75A and 10V gate drive. Key characteristics include a gate charge (Qg) of 65nC at 10V and input capacitance (Ciss) of 4310pF at 60V. The MOSFET utilizes Metal Oxide technology and is housed in a PG-TO251-3-11 package, also known as TO-251-3 Stub Leads or IPAK, suitable for through-hole mounting. Operating temperature range is -55°C to 175°C (TJ) with a maximum gate-source voltage (Vgs) of ±20V. This device is commonly utilized in automotive and industrial power management solutions.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 83µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 120 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4310 pF @ 60 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
