IPS105N03LGAKMA1
MOSFET N-CH 30V 35A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPS105N03LGAKMA1 is an N-Channel power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 35A at 25°C (Tc), with a maximum power dissipation of 38W (Tc). The low on-resistance (Rds On) of 10.5mOhm at 30A and 10V, combined with a gate charge (Qg) of 14 nC at 10V, ensures excellent conduction and switching performance.
The MOSFET is housed in a TO-251-3 (IPAK) package with through-hole mounting and operates across a wide temperature range of -55°C to 175°C (TJ). Key parameters include an input capacitance (Ciss) of 1500 pF (Max) at 15V and a gate-source breakdown voltage (Vgs(Max)) of ±20V. The threshold voltage (Vgs(th)) is rated at a maximum of 2.2V at 250µA. This device is suitable for applications in automotive, industrial power supplies, and motor control systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 15 V |
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