IPS09N03LA G
MOSFET N-CH 25V 50A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPS09N03LA-G is an N-Channel MOSFET designed for demanding power applications. This component features a 25V drain-source breakdown voltage and a continuous drain current rating of 50A at 25°C (Tc), with a maximum power dissipation of 63W (Tc). The low on-resistance of 8.8mOhm is achieved at 30A and 10Vgs, facilitated by efficient gate charge characteristics of 13 nC at 5V. With an input capacitance (Ciss) of 1450 pF (typical) at 15V, it offers excellent switching performance. The device is housed in a PG-TO251-3-11 (IPAK) package, suitable for through-hole mounting. Operating across a wide temperature range of -55°C to 175°C (TJ), this MOSFET is utilized in sectors such as automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1642 pF @ 15 V |
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