IPS06N03LA G
MOSFET N-CH 25V 50A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPS06N03LA-G, offers robust performance with a 25V drain-source voltage and 50A continuous drain current at 25°C. This device features a low Rds(on) of 5.9mOhm maximum at 30A and 10V Vgs, facilitating efficient power switching. The MOSFET technology and a maximum power dissipation of 83W (Tc) make it suitable for demanding applications. Key parameters include a gate charge of 22nC at 5V Vgs and input capacitance of 2653pF at 15V Vds. The PG-TO251-3-11 package with through-hole mounting is designed for reliable thermal management. This component finds application in automotive and industrial power control systems. It is rated for an operating temperature range of -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 40µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2653 pF @ 15 V |
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