IPS060N03LGAKMA1
MOSFET N-CH 30V 50A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies presents the OptiMOS™ series N-Channel power MOSFET, part number IPS060N03LGAKMA1. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 50A at 25°C (Tc), with a maximum power dissipation of 56W (Tc). The low on-resistance is specified at 6mOhm maximum at 30A and 10V (Vgs). Key parameters include a gate charge (Qg) of 23nC at 10V (Vgs) and input capacitance (Ciss) of 2400pF at 15V (Vds). Designed with a TO-251-3 (IPAK) package, this through-hole component is suitable for industrial applications, including power supplies and motor control. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2400 pF @ 15 V |
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