IPS04N03LA G
MOSFET N-CH 25V 50A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPS04N03LA-G is a 25V N-channel power MOSFET designed for high-performance switching applications. This component offers a continuous drain current of 50A at 25°C with a maximum power dissipation of 115W (Tc). Featuring a low on-resistance of 4mOhm at 50A and 10V Vgs, it ensures efficient power transfer. The device operates with a gate-source voltage range of ±20V and a threshold voltage of 2V (max) at 80µA. Key electrical characteristics include an input capacitance (Ciss) of 5199 pF (max) at 15V and a gate charge (Qg) of 41 nC (max) at 5V. The IPS04N03LA-G is housed in a PG-TO251-3-11 package with through-hole mounting, suitable for demanding applications in automotive, industrial power supplies, and power management systems. Its operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 115W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 80µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5199 pF @ 15 V |
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