IPS040N03LGAKMA1
MOSFET N-CH 30V 90A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPS040N03LGAKMA1, features a 30V drain-source voltage and a continuous drain current of 90A at 25°C (Tc). This MOSFET offers a low on-resistance of 4mOhm maximum at 30A and 10V Vgs, enabled by its advanced OptiMOS™ technology. The device is packaged in a PG-TO251-3-11 (IPAK) through-hole configuration with stub leads. Key electrical parameters include a gate charge of 38 nC at 10V Vgs and input capacitance of 3900 pF at 15V Vds. With a maximum power dissipation of 79W (Tc) and an operating junction temperature range of -55°C to 175°C, this component is suitable for applications in power management and automotive systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 15 V |
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