IPS031N03LGAKMA1
LV POWER MOSManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ 3 N-Channel Power MOSFET, part number IPS031N03LGAKMA1, features a 30V drain-source voltage and a continuous drain current of 90A at 25°C (Tc). This through-hole component in a TO-251-3 IPAK package offers a low on-resistance of 3.1mOhm at 30A and 10V Vgs. With a maximum power dissipation of 94W (Tc), it utilizes MOSFET technology and supports gate drive voltages from 4.5V to 10V. Key parameters include a maximum gate charge of 51nC and input capacitance of 5300pF. Operating temperature ranges from -55°C to 175°C. This device is suitable for applications in automotive and industrial power management.
Additional Information
Series: OptiMOS™ 3RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 15 V |
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