IPS031N03L G
MOSFET N-CH 30V 90A TO251-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ IPS031N03L-G is a high-performance N-Channel MOSFET designed for demanding applications. This device features a 30V drain-source voltage and a continuous drain current of 90A at 25°C (Tc), with a maximum power dissipation of 94W (Tc). The low on-resistance of 3.1mOhm is achieved at 30A and 10V Vgs. Key parameters include a gate charge of 51 nC (max) at 10V and an input capacitance of 5300 pF (max) at 15V. The MOSFET is housed in a PG-TO251-3-11 package, commonly known as IPAK, with stub leads and is available in tube packaging. It supports gate-source voltages from 4.5V to 10V for optimal Rds(on) performance and has a maximum Vgs of ±20V. Operating temperature ranges from -55°C to 175°C. This component finds application in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Stub Leads, IPAK |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 94W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO251-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5300 pF @ 15 V |
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