IPP90R800C3XKSA1
MOSFET N-CH 900V 6.9A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ N-Channel Power MOSFET, part number IPP90R800C3XKSA1, offers a 900V drain-source voltage and 6.9A continuous drain current at 25°C. This through-hole component, housed in a PG-TO220-3-1 package, features a maximum power dissipation of 104W and a low on-resistance of 800mOhm at 4.1A and 10V gate-source voltage. Key parameters include a gate charge of 42nC (max) at 10V and input capacitance of 1100pF (max) at 100V. Operating temperature range is -55°C to 150°C. This device is suitable for applications in power factor correction, switch-mode power supplies, and industrial motor control.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 460µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
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