IPP90R1K2C3XKSA2
MOSFET N-CH 900V 5.1A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies N-Channel Power MOSFET, part number IPP90R1K2C3XKSA2, from the CoolMOS™ series. This device offers a 900V drain-source voltage (Vdss) and a continuous drain current (Id) of 5.1A at 25°C (Tc). With a maximum power dissipation of 83W (Tc) and a low on-resistance (Rds On) of 1.2 Ohm at 2.8A and 10V Vgs, it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 28 nC at 10V and input capacitance (Ciss) of 710 pF at 100V. The MOSFET is housed in a PG-TO220-3-1 package with through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ) and supports a maximum gate-source voltage (Vgs) of ±20V. This component finds application in power supply units, industrial motor drives, and solar inverters.
Additional Information
Series: CoolMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Not For New DesignsPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 310µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V |
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