IPP90N06S4L04AKSA1
MOSFET N-CH 60V 90A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP90N06S4L04AKSA1 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 90A at 25°C (Tc). The low on-resistance of 3.7mOhm at 90A and 10V gate-source voltage is achieved through advanced OptiMOS™ technology, minimizing conduction losses. With a maximum power dissipation of 150W (Tc), it is suitable for demanding power management tasks. Key electrical parameters include a gate charge of 170nC at 10V and input capacitance (Ciss) of 13000pF at 25V. The device is housed in a standard PG-TO220-3-1 package, facilitating through-hole mounting. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive power systems, industrial motor control, and power supply units.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 90µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 25 V |
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