IPP90N06S404AKSA1
MOSFET N-CH 60V 90A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPP90N06S404AKSA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a 60V drain-source voltage and a continuous drain current capability of 90A at 25°C (Tc), with a maximum power dissipation of 150W (Tc). The low on-resistance of 4mOhm at 90A and 10V gate-source voltage (Vgs) minimizes conduction losses. Key characteristics include a gate charge of 128 nC at 10V and input capacitance of 10400 pF at 25V. The MOSFET is housed in a PG-TO220-3-1 package with a through-hole mounting type, suitable for operation across a wide temperature range of -55°C to 175°C (TJ). This device finds application in power supplies, motor control, and automotive systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10400 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
