IPP80R750P7XKSA1
MOSFET N-CH 800V 7A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series N-channel power MOSFET, part number IPP80R750P7XKSA1. This through-hole device features an 800V drain-source voltage and a continuous drain current of 7A at 25°C (Tc). With a maximum on-resistance of 750mOhm at 2.7A and 10V, and a power dissipation of 51W (Tc), it is suitable for applications requiring high voltage and efficient switching. Key parameters include a Ciss of 460pF (max) at 500V and a Qg of 17nC at 10V. The PG-TO220-3 package facilitates robust thermal management. This component is utilized in power supply units, lighting, and industrial motor control applications.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 51W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 140µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 500 V |
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