IPP80R600P7XKSA1
MOSFET N-CH 800V 8A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies CoolMOS™ P7 series IPP80R600P7XKSA1 is an N-channel power MOSFET designed for high-voltage applications. This device features a drain-source voltage (Vdss) of 800V and offers a continuous drain current (Id) of 8A at 25°C (Tc), with a maximum power dissipation of 60W (Tc). The Rds(On) is specified at 600mOhm maximum at 3.4A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 570 pF at 500V. The MOSFET is packaged in a PG-TO220-3 through-hole package, suitable for demanding power conversion systems in industries such as industrial power supplies, server power, and renewable energy. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 3.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 170µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 500 V |
Request a Quote
Clients Also Buy
IPD70R360P7SAUMA1
MOSFET N-CH 700V 12.5A TO252-3
IPD60R180P7SAUMA1
MOSFET N-CH 600V 18A TO252-3
IPD60R280P7SAUMA1
MOSFET N-CH 600V 12A TO252-3
