IPP80R360P7XKSA1
MOSFET N-CH 800V 13A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies CoolMOS™ P7 series N-channel power MOSFET, part number IPP80R360P7XKSA1, offers 800V drain-source breakdown voltage and 13A continuous drain current at 25°C case temperature. This through-hole component features a maximum on-resistance of 360mOhm at 5.6A and 10V Vgs. The IPP80R360P7XKSA1 is housed in a PG-TO220-3 package, providing 84W of power dissipation. Key parameters include a gate charge of 30 nC and input capacitance of 930 pF, enabling efficient switching performance. This device is suitable for applications in power supply units, lighting, and industrial power control.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 5.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 84W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 280µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 930 pF @ 500 V |
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