IPP80R1K2P7XKSA1
MOSFET N-CH 800V 4.5A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies N-Channel MOSFET, IPP80R1K2P7XKSA1, part of the CoolMOS™ P7 series, offers 800V drain-source voltage and 4.5A continuous drain current at 25°C. This through-hole component, housed in a TO-220-3 package (PG-TO220-3), features a maximum power dissipation of 37W (Tc) and a low on-resistance of 1.2 Ohm at 1.7A and 10V gate-source voltage. Key parameters include a maximum gate charge of 11 nC at 10V and input capacitance of 300 pF at 500V. The operating temperature range is -55°C to 150°C (TJ). This device is suitable for applications in power supply, lighting, and industrial motor control sectors.
Additional Information
Series: CoolMOS™ P7RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Last Time BuyPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 1.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 37W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 80µA |
| Supplier Device Package | PG-TO220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 800 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 500 V |
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