IPP80P04P4L04AKSA1
MOSFET P-CH 40V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPP80P04P4L04AKSA1 is a P-Channel Power MOSFET designed for high-performance applications. This component features a 40V drain-source voltage and a continuous drain current capability of 80A at 25°C (Tc). The Rds(on) is specified at a maximum of 4.7 mOhm at 80A and 10V Vgs. Key parameters include a gate charge (Qg) of 176 nC @ 10V and input capacitance (Ciss) of 3800 pF @ 25V. With a maximum power dissipation of 125W (Tc), this device is housed in a PG-TO220-3-1 package suitable for through-hole mounting. The IPP80P04P4L04AKSA1 is AEC-Q101 qualified, indicating its suitability for demanding automotive environments. Its operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +5V, -16V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 176 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3800 pF @ 25 V |
| Qualification | AEC-Q101 |
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