IPP80P03P4L07AKSA1
MOSFET P-CH 30V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP80P03P4L07AKSA1 is a P-channel Power MOSFET designed for high-efficiency power switching applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 80A at 25°C, with a maximum power dissipation of 88W at the same temperature. The low on-resistance (Rds On) of 7.2mOhm at 80A and 10V Vgs ensures minimal conduction losses. It operates with gate drive voltages between 4.5V and 10V, and has a maximum gate-source voltage (Vgs) of -16V. Key parameters include a gate charge (Qg) of 80 nC at 10V and input capacitance (Ciss) of 5700 pF at 25V. The component is packaged in a PG-TO220-3-1 for through-hole mounting and operates within a temperature range of -55°C to 175°C. This MOSFET is suitable for use in automotive, industrial power supply, and renewable energy systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 130µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | +5V, -16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5700 pF @ 25 V |
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