IPP80P03P4L04AKSA2
MOSFET P-CH 30V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS®-P2 IPP80P03P4L04AKSA2 is a P-channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 80 A at 25°C (Tc). With a low on-resistance (Rds On) of 4.4 mOhm at 80 A, 10 V, it offers efficient power handling. The device boasts a maximum power dissipation of 137 W (Tc) and a junction temperature range of -55°C to 175°C. Key parameters include gate charge (Qg) of 160 nC at 10 V and input capacitance (Ciss) of 11300 pF at 25 V. The IPP80P03P4L04AKSA2 is housed in a TO-220-3 package, suitable for through-hole mounting. Its qualification for automotive applications (AEC-Q101) makes it suitable for use in the automotive sector.
Additional Information
Series: OptiMOS®-P2RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 137W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 253µA |
| Supplier Device Package | PG-TO220-3-1 |
| Grade | Automotive |
| Vgs (Max) | +5V, -16V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 160 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11300 pF @ 25 V |
| Qualification | AEC-Q101 |
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