IPP80N08S2L07AKSA1
MOSFET N-CH 75V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPP80N08S2L07AKSA1, features a 75V drain-source breakdown voltage and a continuous drain current of 80A (Tc) at 25°C. This device offers a low on-resistance of 7.1mOhm maximum at 80A and 10V Vgs, with a power dissipation capability of 300W (Tc). The gate charge (Qg) is rated at 233 nC maximum at 10V Vgs, and input capacitance (Ciss) is 5400 pF maximum at 25V Vds. It operates across a temperature range of -55°C to 175°C (TJ). Packaged in a PG-TO220-3-1 case for through-hole mounting, this MOSFET is suitable for applications in automotive systems and industrial power supplies.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.1mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 233 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5400 pF @ 25 V |
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