IPP80N06S4L07AKSA1
MOSFET N-CH 60V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPP80N06S4L07AKSA1, features a 60V drain-to-source voltage and 80A continuous drain current at 25°C. This device boasts a low on-resistance of 6.7mOhm at 80A and 10V Vgs, with a gate charge of 75 nC at 10V. The input capacitance (Ciss) is 5680 pF maximum at 25V. Rated for 79W maximum power dissipation at 25°C (Tc), it operates within a temperature range of -55°C to 175°C (TJ). The device utilizes N-Channel MOSFET technology and is housed in a PG-TO220-3-1 package suitable for through-hole mounting. Applications for this component are found in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 40µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5680 pF @ 25 V |