IPP80N06S4L05AKSA2
MOSFET N-CH 60V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP80N06S4L05AKSA2 is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 107W (Tc). The low on-resistance is specified at 8.5mOhm at 40A and 4.5V gate drive. Key parameters include a Gate Charge (Qg) of 110 nC at 10V and Input Capacitance (Ciss) of 8180 pF at 25V. The MOSFET supports a wide gate drive range from 4.5V to 10V and has a maximum Vgs of ±16V, with a threshold voltage (Vgs(th)) of 2.2V at 60µA. Manufactured with Metal Oxide technology, this component is qualified to AEC-Q101 and is presented in a PG-TO220-3-1 package suitable for through-hole mounting. Its robust specifications make it suitable for automotive and industrial power management systems. Operating temperature ranges from -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 40A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 60µA |
| Supplier Device Package | PG-TO220-3-1 |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8180 pF @ 25 V |
| Qualification | AEC-Q101 |
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