IPP80N06S4L05AKSA1
MOSFET N-CH 60V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP80N06S4L05AKSA1 is an N-channel power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 80 A at 25°C (Tc). The Rds(on) is minimized to 5.1 mOhm at 80 A and 10 V, ensuring high efficiency. With a maximum power dissipation of 107 W (Tc), it is suitable for demanding thermal environments. The device offers a gate charge (Qg) of 110 nC at 10 V and input capacitance (Ciss) of 8180 pF at 25 V. It supports drive voltages from 4.5 V to 10 V and has a maximum gate-source voltage (Vgs) of ±16 V. The threshold voltage (Vgs(th)) is 2.2 V at 60 µA. Packaged in a PG-TO220-3-1 (TO-220-3) for through-hole mounting, the Infineon Technologies IPP80N06S4L05AKSA1 operates across a temperature range of -55°C to 175°C (TJ). This component is utilized in automotive, industrial, and power supply applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 60µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8180 pF @ 25 V |
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