IPP80N06S3L-08
MOSFET N-CH 55V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPP80N06S3L-08 is an N-channel power MOSFET with a drain-source voltage (Vds) of 55 V. This component features a continuous drain current (Id) of 80 A at 25°C (Tc) and a maximum power dissipation of 105 W (Tc). The on-resistance (Rds On) is specified at a maximum of 7.9 mOhm at 43 A and 10 V. The device utilizes a through-hole mounting type in a PG-TO220-3-1 package. Key electrical characteristics include a gate charge (Qg) of 134 nC at 10 V and input capacitance (Ciss) of 6475 pF at 25 V. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is suitable for applications in automotive and industrial power conversion.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 7.9mOhm @ 43A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 105W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 55µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 134 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6475 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
