IPP80N06S3L-05
MOSFET N-CH 55V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPP80N06S3L-05 is an N-Channel Power MOSFET in a PG-TO220-3-1 package. This device features a 55V drain-source voltage and a continuous drain current of 80A at 25°C (Tc), with a maximum power dissipation of 165W (Tc). The Rds(On) is specified at a maximum of 4.8mOhm at 69A and 10V Vgs. Key parameters include a gate charge (Qg) of 273 nC at 10V and an input capacitance (Ciss) of 13060 pF at 25V. This component is suitable for through-hole mounting and operates across a temperature range of -55°C to 175°C (TJ). The technology employed is Metal Oxide MOSFET. This device is commonly utilized in automotive and industrial applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8mOhm @ 69A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 165W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 115µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 273 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13060 pF @ 25 V |
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