IPP80N06S2LH5AKSA2
MOSFET N-CH 55V 80A TO220-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ IPP80N06S2LH5AKSA2 is an N-channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source voltage (Vdss) of 55V and a continuous drain current (Id) of 80A at 25°C (Tc), with a maximum power dissipation of 300W (Tc). The Rds(On) is specified at a low 5mOhm at 80A and 10V gate drive. Key electrical parameters include a Gate Charge (Qg) of 190 nC at 10V and Input Capacitance (Ciss) of 5000 pF at 25V. The device supports a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) of 2V at 250µA. Manufactured using advanced MOSFET technology, it is housed in a PG-TO220-3-1 package suitable for through-hole mounting. This component is commonly utilized in automotive, industrial, and power supply applications where robust performance and low conduction losses are critical. It operates within an ambient temperature range of -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 80A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | PG-TO220-3-1 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5000 pF @ 25 V |
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